Schottky effect model of electrical activity of metallic precipitates in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126778
Reference7 articles.
1. Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary
2. Recombination properties of structurally well defined NiSi2precipitates in silicon
3. A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity
4. Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
5. Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications
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