Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371075
Reference6 articles.
1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
2. Improvement of minority carrier diffusion length in Si by Al gettering
3. Gettering of metallic impurities in photovoltaic silicon
4. Simulation of the transient indiffusion‐segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices
5. Models for computer simulation of complete IC fabrication process
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