Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells-Reference-Cited by-同舟云学术

Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells

Published:2019-07-17 Issue:17 Volume:216 Page:1900321
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hayes Maxim¹²^ORCID,Martel Benoit¹,Alam Giri Wahyu¹³,Lignier Hélène¹,Dubois Sébastien¹,Pihan Etienne¹,Palais Olivier²

Affiliation:

1. Département des Technologies SolairesUniversité Grenoble Alpes, INES; CEA, LITEN 50 avenue du Lac Léman Le Bourget-du-Lac F-73375 France

2. Département DétectionRayonnements et FiabilitéIM2NP UMR CNRS 7334Aix Marseille Université Campus Saint-Jérôme, Case 142 Marseille Cedex 20 13397 France

3. Centre of Technology for MaterialsAgency for the Assessment and Application of Technology Bldg. 224 PUSPIPTEK South Tangerang 15314 Indonesia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900321

Reference63 articles.

1. Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells

2. Development of high-performance multicrystalline silicon for photovoltaic industry

3. High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

4. Efficacy of Phosphorus Gettering and Hydrogenation in Multicrystalline Silicon

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