An emission stable vertical air channel diode by a low-cost and IC compatible BOE etching process-Reference-Cited by-同舟云学术

An emission stable vertical air channel diode by a low-cost and IC compatible BOE etching process

Published:2021 Issue:11 Volume:13 Page:5693-5699
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu Meng¹²³⁴^ORCID,Liang Songtai¹²³⁴^ORCID,Shi Dongfang¹²³⁴^ORCID,Yang Siyuan¹²³⁴^ORCID,Lei Yu¹²³⁴^ORCID,Li Tie¹²³⁴,Wang Yuelin¹²³⁴

Affiliation:

1. Shanghai Institute of Microsystem and Information Technology

2. Chinese Academy of Sciences

3. Shanghai 200050

4. China

Abstract

An emission-stable nanoscale air channel diode, consisting of two asymmetric flat emitters and a sub-100 nm air channel, is proposed and fabricated by a low-cost and IC compatible BOE Etching Process.

Funder

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08997D

Reference38 articles.

1. Nothing is like a vacuum

2. Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor

3. Recent progress in nanostructured next-generation field emission devices

4. Metal–oxide–semiconductor field-effect transistor with a vacuum channel

5. S. Nirantar , T.Ahmed , M.Bhaskaran , J. O.Han and S.Sriram , Advanced Intelligent Systems , 2019 , vol. 1

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diode-Like Field Emission Devices Fabricated by Standard 0.35-μm CMOS MEMS Process;IEEE Transactions on Electron Devices;2024-09

2. Radio frequency side-gate nanoscale vacuum channel triode;Journal of Vacuum Science & Technology B;2024-08-29

3. High-frequency performance in nanoscale vacuum channel transistors with gate-cathode height difference;Journal of Physics D: Applied Physics;2024-08-29

4. GaN Nano Air Channel Diodes: Enabling High Rectification Ratio and Neutron Robust Radiation Operation;Advanced Science;2024-06-27

5. Design and High-Frequency Characterization of a Wafer-Scale Vertical Bridge Structure Nanoscale Vacuum Electronic Device;IEEE Transactions on Electron Devices;2024-05