Design and High-Frequency Characterization of a Wafer-Scale Vertical Bridge Structure Nanoscale Vacuum Electronic Device-Reference-Cited by-同舟云学术

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Design and High-Frequency Characterization of a Wafer-Scale Vertical Bridge Structure Nanoscale Vacuum Electronic Device

Published:2024-05 Issue:5 Volume:71 Page:3221-3227
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Ruihan¹,Chen Feiliang¹,Yang Junxiang¹,Zhao Haiquan¹^ORCID,Wei Yazhou¹^ORCID,Wang Xiangdong¹,Jiang Hao¹^ORCID,Yang Fan¹^ORCID,Liu Yang¹^ORCID,Li Mo¹^ORCID,Zhang Jian¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China

Funder

Fundamental Research Funds for the Central Universities

Fundamental Research Funding

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10494991.pdf?arnumber=10494991

Reference36 articles.

1. Metal–oxide–semiconductor field-effect transistor with a vacuum channel

2. Practical nanoscale field emission devices for integrated circuits

3. Electron Emission Regimes of Planar Nano Vacuum Emitters

4. Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

5. Ultralow Voltage GaN Vacuum Nanodiodes in Air

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