Stranski–Krastanow growth of (112¯2)-oriented GaN/AlN quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3095499
Reference17 articles.
1. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
2. Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
3. Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy
4. From visible to white light emission by GaN quantum dots on Si(111) substrate
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