A study of the piezoelectric properties of semipolar 112̅2 GaN/AlN quantum dots-Reference-Cited by-同舟云学术

A study of the piezoelectric properties of semipolar 112̅2 GaN/AlN quantum dots

Published:2015-07-14 Issue:10 Volume:252 Page:2296-2303
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Young T. D.¹,Jurczak G.¹,Lotsari A.²,Dimitrakopulos G. P.²,Komninou Ph.²,Dłużewski P.¹

Affiliation:

1. Division of Computational Methods; Institute of Fundamental Technological Research of the Polish Academy of Sciences; ul. Pawińskiego 5b, 02-106 Warsaw Poland

2. Department of Physics; Aristotle University of Thessaloniki; 54124 Thessaloniki Greece

Funder

Polish Ministry of Science and Higher Education. A. Lotsari

Fellowship of Excellence of the Aristotle University of Thessaloniki Research Committee

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552156/fullpdf

Reference52 articles.

1. III-nitride semiconductors for intersubband optoelectronics: a review

2. Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

3. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

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