Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters-Reference-Cited by-同舟云学术

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Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters

Published:2014-06-01 Issue:8 Volume:29 Page:084001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Brault J,Rosales D,Damilano B,Leroux M,Courville A,Korytov M,Chenot S,Vennéguès P,Vinter B,De Mierry P,Kahouli A,Massies J,Bretagnon T,Gil B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=8/a=084001/pdf

Reference35 articles.

1. White light emitting diodes with super-high luminous efficacy

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

5. InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

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2. (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission;Nanomaterials;2023-08-24

3. Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source;Journal of Applied Physics;2023-01-17

4. Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions;Applied Optics;2022-08-11

5. Epitaxial Growth of III-Nitride LEDs;III-Nitride LEDs;2022

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