Magnetoresistance in doped Bi0.85Sb0.15 single crystals-Reference-Cited by-同舟云学术

Magnetoresistance in doped Bi0.85Sb0.15 single crystals

Published:2017-11-28 Issue:20 Volume:122 Page:205102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kozhemyakin G. N.¹^ORCID,Zayakin S. A.²

Affiliation:

1. Laboratory of Space Materials Science, Shubnikov Institute of Crystallography of Federal Scientific Research Center “Crystallography and Photonics” of Russian Academy of Sciences, Pr. Lenina, 59, 119333 Moscow, Russia

2. Laboratory of Semiconductor Materials, Baikov Institute of Metallurgy and Materials Science of Russian Akademy of Sciences, Pr. Lenina, 49, 119334 Moscow, Russia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997706

Reference40 articles.

1. Large linear magnetoresistance in the Dirac semimetal TlBiSSe

2. Angular-dependences of giant in-plane and interlayer magnetoresistances in Bi2Te3bulk single crystals

3. Transport properties of bismuth in quantizing magnetic fields

4. Temperature dependence of excess carrier density and thermopower in tin-doped bismuth. Pseudo-parabolic model

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