Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate-Reference-Cited by-同舟云学术

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Published:2021-07-23 Issue:30 Volume:13 Page:36492-36498
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sadek Dima¹,Dhungana Daya S.¹,Coratger Roland²,Durand Corentin¹²,Proietti Arnaud³,Gravelier Quentin¹,Reig Benjamin¹,Daran Emmanuelle¹,Fazzini Pier Francesco⁴,Cristiano Fuccio¹,Arnoult Alexandre¹,Plissard Sébastien R.¹^ORCID

Affiliation:

1. LAAS-CNRS, Université de Toulouse, Toulouse F-31400, France

2. SINANO Group, CEMES-CNRS and Université Paul Sabatier, 29 rue J. Marvig, Toulouse 31055, France

3. Centre De Microcaractérisation Raimond Castaing, Espace Clément Ader, 3 Rue Caroline Aigle, Toulouse F-31400, France

4. Laboratoire de Physique et Chimie des Nano-objets, Institut National des Sciences Appliquées, 135 Avenue de Rangueil, Toulouse, Cedex 4 F-31077, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c08477

Reference30 articles.

1. The birth of topological insulators

2. Electronic properties of nano-structured bismuth-antimony materials

3. Z2Topological Order and the Quantum Spin Hall Effect