Bulk and Surface Electrical Properties of BiSb on Flat and Ion‐Beam Nano‐Patterned InP Substrates

Abstract

One route to the improvement of thermoelectric material performance is nanostructuring. Herein, BiSb thin films are grown by molecular‐beam epitaxy on two types of InP(001) substrate: flat epiready wafer, and nano‐patterned by ion bombardment and annealing (IBA). The effects of IBA on InP substrate are presented, and the structural and electrical properties of the BiSb films are measured. BiSb films on flat substrates are highly textured with (003) orientation, while films on IBA‐patterned substrates are less well ordered with mainly (012) orientation. A simple calculation method for nonplanar Hall measurements is proposed to explain the electrical conduction in rough films. The effects of BiSb film texture, roughness, and thickness on carrier density and mobility are provided. Sheet carrier density is independent of thickness at 77 K, which suggests conduction via surface states. Topological protection of such states may support nano‐patterning as a route to reducing thermal conductivity while maintaining electrical conductivity.