Electronic properties of nano-structured bismuth-antimony materials-Reference-Cited by-同舟云学术

Electronic properties of nano-structured bismuth-antimony materials

Published:2014 Issue:24 Volume:2 Page:4710-4726
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tang Shuang¹²³,Dresselhaus Mildred S.⁴²³⁵²

Affiliation:

1. Department of Materials Science and Engineering

2. Massachusetts Institute of Technology

3. Cambridge, USA

4. Department of Electrical Engineering and Computer Science

5. Department of Physics

Abstract

Bismuth antimony (Bi_1−xSb_x) is one of the most important materials systems for fundamental materials science, condensed matter physics, low temperature thermoelectrics, infrared applications, and beyond.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00146J

Reference103 articles.

1. Effect of quantum-well structures on the thermoelectric figure of merit

2. Thermoelectric figure of merit of a one-dimensional conductor

3. Transport properties of Bi1−xSbx alloy nanowires synthesized by pressure injection

4. Anomalously high thermoelectric figure of merit in Bi1−xSbx nanowires by carrier pocket alignment

5. Semimetal–semiconductor transition in Bi1−xSbx alloy nanowires and their thermoelectric properties

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