Temperature dependence of excess carrier density and thermopower in tin-doped bismuth. Pseudo-parabolic model
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/16/i=23/a=022/pdf
Reference27 articles.
1. Galvanomagnetic Effects in Bismuth
2. Galvanomagnetic Studies of Sn-Doped Bi. II. Negative Fermi Energies
3. Low‐Field Galvanomagnetic Effects in Sn‐Doped Bi Crystals at 77°K
4. The low-temperature thermoelectric properties of tin-doped bismuth
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