Linear magnetoresistance in textured Bi1−xSbx ribbons prepared by melt spinning method

Abstract

Bi1− xSb x alloys with large linear magnetoresistance (LMR) are a promising candidate for magneto-electronic devices. In this work, the highly (00 l) textured Bi1− xSb x (0 ≤  x ≤ 0.04) ribbons with nano-sized lamellar grains were prepared by the melt spinning method and their magneto-transport properties were investigated. All the ribbons exhibit obvious LMR features, and the crossover magnetic field ( Bc) from quadratic to linear magnetoresistance is remarkably reduced by Sb doping. Compared with the Bc of the x = 0 ribbon (about 1.28 T at 300 K), the Bc values of the Sb doped ribbons are significantly smaller, especially for the Bc of the x = 0.03 ribbon (only about 0.53 T at 300 K). Besides, for the x = 0.03 ribbon, the parameter Φ (MR%( B = 1 T)/ Bc) relevant to LMR performance reaches up to 52 at 300 K. Analysis of the LMR reveals that Sb doping makes the LMR mechanism transition from recombination of carriers for x = 0 ribbon to spatial fluctuation of carrier mobility governed LMR for x = 0.03 ribbon. This work is instructive to understand the transport features of textured Bi1− xSb x ribbons.