Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371633
Reference8 articles.
1. Auger recombination in silicon atlowcarrier densities
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3. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
4. Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
5. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
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