Abstract
Light-induced degradation (LID) and elevated temperature-induced degradation (LeTID) mechanisms negatively affect the performance of p-type Cz-Si-based solar cells. In this study, the degradation rates under illumination were investigated for non-metallized and metallized PERC cells with different base resistivities at different temperatures. These bifacial PERC cells are produced from own-produced ingots and wafers in a vertically integrated environment. The effect of different regeneration processes, using either illuminated annealing or direct current injection used in standard production against LID, is also investigated.
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