Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125086
Reference17 articles.
1. Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
2. Measurement of gain current relations for InGaN multiple quantum wells
3. Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser
4. Incorporation of indium during molecular beam epitaxy of InGaN
5. In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
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