In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells-Reference-Cited by-同舟云学术

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In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

Published:1997-12 Issue:1-3 Volume:50 Page:238-244
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Scholz F,Sohmer A,Off J,Syganow V,Dörnen A,Im J.-S,Hangleiter A,Lakner H

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Characteristics of InGaN Multiquantum-Well-Structure Laser Diodes

2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

3. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

4. Shortest wavelength semiconductor laser diode

5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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2. 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region;Optics Express;2024-05-09

3. Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures;AIP Advances;2024-04-01

4. Structure of V-defects in long wavelength GaN-based light emitting diodes;Journal of Applied Physics;2023-01-19

5. III‐Nitride Micro‐LEDs for Efficient Emissive Displays;Laser & Photonics Reviews;2019-08-12

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