Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films-Reference-Cited by-同舟云学术

Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films

Published:2019-11-01 Issue:11 Volume:9 Page:115304
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Arifin Pepen¹,Sutanto Heri²,Subagio Agus²,Sugianto Sugianto³,Mustajab Muhammad A.¹

Affiliation:

1. Physics of Electronic Materials Division, Department of Physics, Faculty of Mathematics and Natural Sciences (FMIPA), Institute of Technology Bandung (ITB), Jl. Ganesha 10, Bandung 40132, Indonesia

2. Department of Physics, University of Diponegoro, Jl. Prof. Soedharto, SH, Tembalang, Semarang 50275, Indonesia

3. Department of Physics, State University of Semarang, Sekaran, Gunungpati, Semarang 50229, Indonesia

Funder

DP2M DIKTI and LPPM ITB

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5126943

Reference23 articles.

1. InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy

2. Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN

3. Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

4. Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

5. Phase separation in InGaN grown by metalorganic chemical vapor deposition

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2. Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors;Applied Physics Letters;2021-02-01

3. Optical studies of nitrogen plasma for molecular beam epitaxy of InN;Journal of Applied Physics;2020-12-07

4. Room-temperature photoluminescence of Mg-doped GaN thin films grown by plasma-assisted MOCVD;AIP Advances;2020-04-01