Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122409
Reference8 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes
3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
4. Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching
5. Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
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2. Interferometric Optical Pumping of an InGaN/GaN-Based Gain-Coupled Distributed Feedback Multi Quantum Well Laser;Crystals;2023-12-15
3. Influence of sidewall grating etching depth on GaN-based distributed feedback laser diodes;Journal of Physics D: Applied Physics;2023-11-07
4. Fabrication of GaN-air channels for embedded photonic structures;Materials Science in Semiconductor Processing;2023-03
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