Diffusion of P in a novel three‐dimensional device based on Si–TaSi2eutectic
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353325
Reference64 articles.
1. Characterization of multipleinsitujunctions in Si‐TaSi2composites by charge‐collection microscopy
2. Silicon- and germanium-based eutectics
3. Novel high quantum efficiency Si‐TaSi2eutectic photodiodes
4. Depletion zone limited transport in Si‐TaSi2eutectic composites
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