FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films-Reference-Cited by-同舟云学术

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FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

Published:2012-09 Issue:23 Volume:258 Page:9342-9346
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Conde J.C.,Martín E.,Stefanov S.,Alpuim P.,Chiussi S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Poly SiGe, a promising material for MEMS monolithic integration with the driving electronics

2. Excimer Laser annealing for shallow junction formation in Si power MOS devices

3. Explanation of the limiting thickness observed in low-temperature silicon epitaxy

4. Low temperature kinetics of Si(100) MBE growth

5. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved thermoelectric properties of nanocrystalline hydrogenated silicon thin films by post-deposition thermal annealing;Thin Solid Films;2017-11

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