Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1391413
Reference20 articles.
1. Self-organized growth of quantum-dot structures
2. Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment
3. Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation
4. Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry
5. Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
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1. Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001);Applied Surface Science;2017-11
2. Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy;Journal of Crystal Growth;2008-11
3. The formation of self-assembled InAs∕GaAs quantum dots emitting at 1.3μm followed by photoreflectance spectroscopy;Journal of Applied Physics;2007-04
4. Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer;Journal of Applied Physics;2007-03-15
5. Contactless modulated reflectivity of quasi 0D self-assembled semiconductor structures;physica status solidi (a);2007-02
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