Stranski-Krastanov formation of InAs quantum dots monitored during growth by reflectance anisotropy spectroscopy and spectroscopic ellipsometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
2. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures
3. Structural and optical properties of self-assembled InGaAs quantum dots
4. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
5. Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures
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1. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors;Advances in Materials Science and Engineering;2023-12-13
2. MOVPE grown InGaAs quantum dots with emission near 1.3 μm for electrically driven single-photon sources;Journal of Crystal Growth;2023-03
3. Real-Time Ellipsometry at High and Low Temperatures;ACS Omega;2023-01-17
4. 1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS);Advances in OptoElectronics;2018-11-14
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