Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Electrically driven single quantum dot polarised single photon emitter
2. Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation
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4. Above-bandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfaces
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