The formation of self-assembled InAs∕GaAs quantum dots emitting at 1.3μm followed by photoreflectance spectroscopy

Author:

Rudno-Rudziński W.,Sęk G.,Misiewicz J.,Lamas T. E.,Quivy A. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer;Materials;2022-01-29

2. Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition;physica status solidi (b);2020-12-15

3. InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates;Physica E: Low-dimensional Systems and Nanostructures;2018-01

4. Investigation of various optical transitions in GaAs/Al0.3Ga0.7As double quantum ring grown by droplet epitaxy;physica status solidi (RRL) - Rapid Research Letters;2016-09

5. Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03

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