Defect production in strained p-type Si1−xGex by Er implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3531539
Reference40 articles.
1. MRS Symposia Proceedings;Coffa S.,1996
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
4. The electrical and defect properties of erbium‐implanted silicon
5. Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
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