Time-resolved analysis of charge responses determining luminescence properties
Author:
Abstract
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Defect production in strained p-type Si1−xGex by Er implantation
2. Impedance Spectroscopy
3. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
4. Preferential alignment of Er–2O centers in GaAs:Er,O revealed by anisotropic host‐excited photoluminescence
5. Conductance measurements onPbcenters at the (111) Si:SiO2interface
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1. Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes;Journal of Applied Physics;2015-04-21
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