Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes
Author:
Affiliation:
1. National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
Funder
KAKENHI
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4918662
Reference36 articles.
1. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
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3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
4. Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer
5. Sequential multiple-step europium ion implantation and annealing of GaN
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2. Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing;Applied Physics Letters;2023-01-16
3. Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy;Japanese Journal of Applied Physics;2022-05-20
4. Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters;Applied Materials Today;2021-03
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