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Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

  • Published:2021-03 Issue: Volume:22 Page:100893
  • ISSN:2352-9407
  • Container-title:Applied Materials Today
  • language:en
  • Short-container-title:Applied Materials Today

Author:

Cardoso J.,Jacopin G.,Faye D.Nd.,Siladie A.M.,Daudin B.,Alves E.,Lorenz K.,Monteiro T.,Correia M.R.,Ben Sedrine N.

Funder

Fundação para a Ciência e a Tecnologia

Université Grenoble Alpes

Publisher

Elsevier BV

Subject

General Materials Science

Reference95 articles.

1. Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure;Ben Sedrine;Nanoscale,2018

2. Photoluminescence investigations of ZnO micro/nanostructures;Rodrigues;Mater. Today Chem,2020

3. Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications,2018

4. Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers;Henneghien;Opt. Express.,2011

5. III-nitride nanowires as building blocks for advanced light emitting diodes;Polyakov;Phys. Status Solidi.,2019

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