III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes-Reference-Cited by-同舟云学术

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III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Published:2019-02-21 Issue:5 Volume:256 Page:1800589
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Polyakov Alexander Y.¹,Kim Taehwan²,Lee In‐Hwan²^ORCID,Pearton Stephen J.³

Affiliation:

1. Department of Semiconductor Electronics and Physics of SemiconductorsNational University of Science and Technology MISiS119049MoscowRussia

2. Department of Materials Science and EngineeringKorea UniversitySeoul02841Korea

3. Department of Materials Science and EngineeringUniversity of FloridaGainesvilleFL32611USA

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201800589

Reference76 articles.

1. Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

2. Status of GaN-based green light-emitting diodes

3. Design Rule of Nanostructures in Light-Emitting Diodes for Complete Elimination of Total Internal Reflection

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1. Wafer-scale vertical GaN nanorod arrays with nonpolar facets using TMAH wet etching;Applied Surface Science;2024-07

2. Enhancing light extraction efficiency of GaN LED by combining complex‐period photonic crystals with doping;Journal of the American Ceramic Society;2023-04-08

3. Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm;Journal of Alloys and Compounds;2022-11

4. Precessed electron diffraction study of defects and strain in GaN nanowires fabricated by top-down etching;Applied Physics Letters;2022-08-22

5. Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells;Journal of Alloys and Compounds;2021-07

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