Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.16313/fulltext
Reference23 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
4. The electrical and defect properties of erbium‐implanted silicon
5. Evaluation of erbium‐doped silicon for optoelectronic applications
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