Substrate rotation‐induced composition modulation in epitaxial AlGaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343370
Reference10 articles.
1. Substrate rotation-induced compositional oscillation in molecular beam epitaxy (MBE)
2. Tem Study of the Accidental Modulation of Mbe Grown AlxGal-x As
3. TEM observations of compositional variations in AlxGa1−xAs grown by OMVPE
4. Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers
5. Influence of {111} regrowth sidewall interfaces on the performance of 1.54 μm InGaAsP/InP etched‐mesa‐buried‐heterostructure lasers
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2. Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3;Materials Advances;2021
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