Influence of {111} regrowth sidewall interfaces on the performance of 1.54 μm InGaAsP/InP etched‐mesa‐buried‐heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337913
Reference8 articles.
1. Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
2. GaInAsP/InP buried heterostructure formation by liquid phase epitaxy
3. Liquid phase epitaxial growth of InP using In1−xSnx melts
4. Effect of active layer placement on the threshold current of 1.3‐μm InGaAsP etched mesa buried heterostructure lasers
5. Correlation between degradation and device characteristic changes in InGaAsP/InP buried heterostructure lasers
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Defect Map for Degradation of Ingaasp/Inp Long Wavelength Laser Diodes;MRS Proceedings;1996
2. New structure by selective regrowth in multi-quantum well laser diodes performed by low pressure metalorganic vapor phase epitaxy;Journal of Crystal Growth;1994-12
3. Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode;Applied Physics Letters;1994-11-07
4. Long Wavelength Laser Diode Reliability and Lattice Imperfections;MRS Bulletin;1993-12
5. High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process;Journal of Applied Physics;1992-07
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