A Defect Map for Degradation of Ingaasp/Inp Long Wavelength Laser Diodes

Author:

Chu S.N.G.,Nakahara S.

Abstract

AbstractWe summarize the characteristic defect structures associated with gradual-degradation, rapiddegradation, catastrophic (mirror-facet) optical damage (COD), electric static discharge (ESD) and electric overstress (EOS) damages to provide a defect-map for device failure mode analysis. The generation mechanisms of these lattice defects are discussed which pinpoint the weak links in the device structures.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Optical Properties;Materials Science in Microelectronics II;2006

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