Laser operation‐induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109765
Reference11 articles.
1. Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs‐GaAsnpnbipolar transistors
2. Migration and gettering of Si, Be, and ambient-related O in AlGaAs/GaAs laser structures
3. Recombination‐enhanced impurity diffusion in Be‐doped GaAs
4. Time dependence of recombination‐enhanced impurity diffusion in GaAs
5. Beam properties of AlGaAs power lasers with high-quality etched mirrors
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