Strain and defects depth distributions in undoped and boron-doped Si1−xGex layers grown by solid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366121
Reference23 articles.
1. Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors
2. Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays
3. Electrical properties of GeSi surface- and buried-channel p-MOSFETs fabricated by Ge implantation
4. The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxy
5. A study of the effect of misfit‐induced strain on the kinetics of solid phase epitaxy in the Si1−xGexon 〈001〉 Si system
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2. Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers;ECS Journal of Solid State Science and Technology;2019
3. Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing;ECS Transactions;2018-07-20
4. Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization;Solid-State Electronics;2013-05
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