Electrical properties of GeSi surface- and buried-channel p-MOSFETs fabricated by Ge implantation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/10174/00477598.pdf?arnumber=477598
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Infrared absorption of GeNNO isolated in solid Ar;The Journal of Chemical Physics;2009-10-14
2. Nanoscale Materials Modification for Device Applications;Ion Beams in Nanoscience and Technology;2009
3. Ultrathin body sige-on-insulator pmosfets with high-mobility sige surface channels;IEEE Transactions on Electron Devices;2003-05
4. Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si1-xGex Alloy;Solid State Phenomena;2001-11
5. High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si/sub 0.91/Ge/sub 0.09/ films;IEEE Electron Device Letters;2001-08
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