Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4835056
Reference35 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Stability of GaN films under intense MeV He ion irradiation
3. Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes
4. White light generation from In-rich InAlGaN/InGaN heterostructures
5. New materials for radiation hard semiconductor dectectors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of Charge Carrier Transport in GaN Sensors;Materials;2016-04-18
2. In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
3. In situvariations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS;Journal of Applied Physics;2014-06-28
4. Correlative analysis of thein situchanges of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN;Applied Physics Letters;2014-02-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3