In situvariations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS

Author:

Gaubas E.1,Brytavskyi I.2,Ceponis T.1,Jasiunas A.1,Kalesinskas V.1,Kovalevskij V.3,Meskauskaite D.1,Pavlov J.1,Remeikis V.3,Tamulaitis G.1,Tekorius A.1

Affiliation:

1. Institute of Applied Research, Vilnius University, Vilnius LT-10222, Lithuania

2. Odessa I.I.Mechnikov National University, Odessa 65082, Ukraine

3. Centre for Physical Sciences and Technology, Vilnius LT-02300, Lithuania

Funder

Research Council of Lithuania

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoluminescence properties of ZnSe:Al, ZnSe:Cu nanoparticles obtained by chemical synthesis;Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019;2019-11-06

2. Study of neutron irradiated structures of ammonothermal GaN;Journal of Physics D: Applied Physics;2017-02-28

3. Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices;ECS Journal of Solid State Science and Technology;2016

4. In situ variations of the scintillation characteristics in GaN and CdS layers under irradiation by 1.6 MeV protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12

5. Evaluating displacement damage in cerium-doped yttrium borate using photoluminescence lifetime;Optical Materials;2015-07

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