A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3267151
Reference15 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
3. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
4. Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
5. From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
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