Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2204836
Reference15 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. Growth of cubic GaN on Si(001) by plasma-assisted MBE
4. High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy
5. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
Cited by 155 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires;Applied Physics Letters;2024-07-22
2. Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2023-12
3. III-Nitride Nanowire LEDs for Enhanced Light Technology;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16
4. Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2023-06
5. Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure;Advanced Photonics Research;2023-05-26
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3