Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz discharge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121728
Reference8 articles.
1. Effects of Hydrogen Additive on Obtaining Residue‐Free Reactive Ion Etching of β ‐ SiC in Fluorinated Plasmas
2. Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System
3. Comparison of dry etch chemistries for SiC
4. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas
5. Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas
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1. Electron series resonance in a magnetized 13.56 MHz symmetric capacitive coupled discharge;Journal of Applied Physics;2018-03-21
2. Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al 2 O 3 bilayer mask;Materials Science in Semiconductor Processing;2017-08
3. Trenched 4H-SiC with tapered sidewall formed by Cl2/O2 reactive ion etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11
4. Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-05
5. A combined etching process toward robust superhydrophobic SiC surfaces;Nanotechnology;2012-05-31
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