Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al 2 O 3 bilayer mask-Reference-Cited by-同舟云学术

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Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al 2 O 3 bilayer mask

Published:2017-08 Issue: Volume:67 Page:104-109
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Li Jingjie,Cheng Xinhong,Wang Qian,Zheng Li,Shen Lingyan,Li Xinchang,Zhang Dongliang,Zhu Hongyue,Shen DaShen,Yu Yuehui

Funder

National Scientific Foundation of China

National Scientific Foundation of Shanghai

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. An improved ICP etching for mesa-terminated 4H-SiC p-i-n diodes;Han;IEEE Trans. Electron Devices,2015

2. Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films;Phan;J. Mater. Chem. C.,2014

3. Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma- assisted oxidation;Kim;Sci. Rep.,2016

4. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001);Deng;Sci. Rep.,2015

5. Effects of spontaneous nitrogen incorporation by a 4H-SiC (0001) surface caused by plasma nitridation;Kim;J. Mater. Chem. C,2015

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cristobalite formation on high-temperature oxidation of 4H-SiC surface based on silicon atom sublimation;Materials Today Communications;2024-08

2. A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance;Micromachines;2024-03-29

3. A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide;Materials;2021-12-24

4. Improved 4H-SiC UMOSFET with super-junction shield region*;Chinese Physics B;2021-05-01

5. RIE工艺参数对4H-SiC刻蚀速率和表面粗糙度的影响;Laser & Optoelectronics Progress;2021

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