RIE工艺参数对4H-SiC刻蚀速率和表面粗糙度的影响
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Published:2021
Issue:19
Volume:58
Page:1922002
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ISSN:1006-4125
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Container-title:Laser & Optoelectronics Progress
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language:en
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Short-container-title:激光与光电子学进展
Author:
Wan Zehong 万泽洪,Cui Enkang 崔恩康,Yu Shengtao 于圣韬,Lei Yu 雷宇,Gui Chengqun 桂成群,Zhou Shengjun 周圣军
Publisher
Shanghai Institute of Optics and Fine Mechanics
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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