Effects of spontaneous nitrogen incorporation by a 4H-SiC(0001) surface caused by plasma nitridation-Reference-Cited by-同舟云学术

Effects of spontaneous nitrogen incorporation by a 4H-SiC(0001) surface caused by plasma nitridation

Published:2015 Issue:19 Volume:3 Page:5078-5088
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Dae-Kyoung¹²³⁴,Kang Yu-Seon¹²³⁴,Jeong Kwang-Sik¹²³⁴,Kang Hang-Kyu¹²³⁴,Cho Sang Wan⁵²⁶⁷,Chung Kwun-Bum⁸⁹¹⁰⁴,Kim Hyoungsub¹¹¹²¹³⁴,Cho Mann-Ho¹²³⁴

Affiliation:

1. Institute of Physics and Applied Physics

2. Yonsei University

3. Seoul 120-749

4. Korea

5. Department of Physics

6. Wonju-si

7. Republic of Korea

8. Division of Physics and Semiconductor Science

9. Dongguk University

10. Seoul, 100-715

11. School Department of Material Science and Engineering

12. Sungkyunkwan University

13. Suwon 440-746

Abstract

Change in defect states in the nitrided 4H-SiC(0001) channel formed by a plasma nitridation (PN) process was investigated as a function of rapid processing time (180 s) at room temperature.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00076A

Reference44 articles.

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