Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects-Reference-Cited by-同舟云学术

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Published:2019-03-28 Issue:4 Volume:1 Page:617-624
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lee Seung Min¹²,Jang Yoonseo¹²,Jung Jongho¹²,Yum Jung Hwan³,Larsen Eric S.³⁴^ORCID,Lee Sang Yeon⁵^ORCID,Seo Hyungtak⁵^ORCID,Bielawski Christopher W.³⁴,Lee Hi-Deok⁶,Oh Jungwoo¹²^ORCID

Affiliation:

1. School of Integrated Technology, Yonsei University, Incheon 21983, Republic of Korea

2. Yonsei Institute of Convergence Technology, Incheon 21983, Republic of Korea

3. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea

4. Department of Chemistry and Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

5. Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea

6. Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

Ministry of Trade, Industry and Energy

Institute for Basic Science

Korea Electric Power Corporation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

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