Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature-Reference-Cited by-同舟云学术

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Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Published:2014-10-20 Issue:16 Volume:105 Page:163505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ahn Byung Du¹,Park Jin-Seong²,Chung K. B.³

Affiliation:

1. School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749, South Korea

2. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea

3. Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4899144

Reference23 articles.

1. A flexible AMOLED display on the PEN substrate driven by oxide thin-film transistors using anodized aluminium oxide as dielectric

2. Stretchable active-matrix organic light-emitting diode display using printable elastic conductors

3. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

4. 25.3: A 9.55-inch Flexible Top-Emission AMOLED with a-IGZO TFTs

5. High-performance flexible zinc tin oxide field-effect transistors

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1. Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al₂O₃ Interlayer;ACS Applied Electronic Materials;2024-02-05

2. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors;Materials;2023-09-11

3. Role of hydrogen in the post-annealing treatments for amorphous In-Ga-Zn oxide thin films;Materials Letters;2023-01

4. Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths;ACS Applied Materials & Interfaces;2022-07-02

5. Impact of Annealing Temperature on Atomic Layer Deposited In–Ga–Zn–O Thin-Film Transistors;ACS Applied Electronic Materials;2022-03-01

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