Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths-Reference-Cited by-同舟云学术

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Published:2022-07-02 Issue:27 Volume:14 Page:31010-31023
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bae Soo-Hyun¹,Yang Jong-Heon²,Kim Yong-Hae²,Kwon Young Ha³,Seong Nak-Jin³,Choi Kyu-Jeong³,Hwang Chi-Sun²,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Korea

2. ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea

3. NCD Co. Ltd, Daejeon 34015, Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c07258

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3. Influence of BEOL process on poly-Si grain boundary traps passivation in 3D NAND flash memory

4. A Novel Approach Using Discrete Grain-Boundary Traps to Study the Variability of 3-D Vertical-Gate NAND Flash Memory Cells

5. Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure

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