Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al<sub>2</sub>O<sub>3</sub> Interlayer-Reference-Cited by-同舟云学术

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Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al₂O₃ Interlayer

Published:2024-02-05 Issue:2 Volume:6 Page:1151-1160
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Min Jung¹^ORCID,Park Hyunjin²^ORCID,Hong Hyunmin¹,Yoo Sungmi³,Jeong Kwangsik¹^ORCID,Kim Yun Ho³⁴^ORCID,Chung Kwun-Bum¹

Affiliation:

1. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea

2. Chemical Materials Solutions Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Korea

3. Advanced Functional Polymers Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Korea

4. KRICT School, University of Science and Technology, Daejeon 34113, Korea

Funder

Korea Research Institute of Chemical Technology

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01554

Reference40 articles.

1. Highly flexible cover window using ultra-thin glass for foldable displays

2. Advanced electronic skin devices for healthcare applications

3. Recent Progress in Printed Physical Sensing Electronics for Wearable Health-Monitoring Devices: A Review

4. Hybridization of a low-temperature processable polyimide gate insulator for high performance pentacene thin-film transistors

5. Polyimide-based gate dielectrics for high-performance organic thin film transistors

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